Next Generation Spin Torque Memories [electronic resource] / by Brajesh Kumar Kaushik, Shivam Verma, Anant Aravind Kulkarni, Sanjay Prajapati.
Вид матеріалу:
Текст Серія: SpringerBriefs in Applied Sciences and TechnologyПублікація: Singapore : Springer Singapore : Imprint: Springer, 2017Видання: 1st ed. 2017Опис: XVII, 92 p. 64 illus. online resourceТип вмісту: - text
- computer
- online resource
- 9789811027208
- 620.5 23
- T174.7
ЕКнига
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Springer Ebooks (till 2020 - Open Access)+(2017 Network Access))
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Springer Ebooks (2017 Network Access))
Introduction to Magnetic Memories and Spin Transfer Torque -- Magnetic Tunnel Junctions (MTJs) -- STT MRAMs -- Hybrid MTJ-CMOS Digital Circuits -- Non-volatile Computing With STT MRAMs -- Spin Transfer Torque Based All Spin Logic (ASL) -- Non-volatile Computing With All Spin Information Processing -- References.
This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
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