TY  - BOOK
AU  - Kaushik,Brajesh Kumar
AU  - Verma,Shivam
AU  - Kulkarni,Anant Aravind
AU  - Prajapati,Sanjay
ED  - SpringerLink (Online service)
TI  - Next Generation Spin Torque Memories
T2  - SpringerBriefs in Applied Sciences and Technology,
SN  - 9789811027208
AV  - T174.7 
U1  - 620.5 23
PY  - 2017///
CY  - Singapore
PB  - Springer Singapore, Imprint: Springer
KW  - Nanotechnology
KW  - Electronics
KW  - Microelectronics
KW  - Electronic circuits
KW  - Nanotechnology and Microengineering
KW  - Electronics and Microelectronics, Instrumentation
KW  - Circuits and Systems
N1  - Introduction to Magnetic Memories and Spin Transfer Torque -- Magnetic Tunnel Junctions (MTJs) -- STT MRAMs -- Hybrid MTJ-CMOS Digital Circuits -- Non-volatile Computing With STT MRAMs -- Spin Transfer Torque Based All Spin Logic (ASL) -- Non-volatile Computing With All Spin Information Processing -- References; Available to subscribing member institutions only. Доступно лише організаціям членам підписки
N2  - This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality
UR  - https://doi.org/10.1007/978-981-10-2720-8
ER  -