Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications [electronic resource] / by Min Zhu.
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Текст Серія: Springer Theses, Recognizing Outstanding Ph.D. ResearchПублікація: Singapore : Springer Singapore : Imprint: Springer, 2017Видання: 1st ed. 2017Опис: XVI, 124 p. 83 illus. online resourceТип вмісту: - text
- computer
- online resource
- 9789811043826
- 537.622 23
- QC610.9-611.8
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Acknowledge -- Abstract -- Introduction -- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials -- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials -- Optimization Component Ti0.43Sb2Te3 -- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device -- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy -- Ti0.43Sb2Te3 Based Phase Change Memory Chip -- Summary -- References -- Published Papers and Patents -- Bibliography.
This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
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